BCR135WE6327
Infineon Technologies
Infineon Technologies
BIPOLAR DIGITAL TRANSISTOR
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Enhance your electronic designs with the BCR135WE6327 by Infineon Technologies, a standout in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased are engineered for superior performance and longevity. Notable features include low noise, high frequency response, and excellent thermal characteristics. Suitable for audio amplifiers, LED drivers, and motor control circuits. Infineon Technologies is committed to delivering high-quality components. Request a quote or additional information today!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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