Shopping cart

Subtotal: $0.00

BCR129E6327

Infineon Technologies
BCR129E6327 Preview
Infineon Technologies
BCR129 - DIGITAL TRANSISTOR
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 10 kOhms
  • Resistor - Emitter Base (R2): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3-11

Related Products

Panasonic Electronic Components

UNR521FG0L

Panasonic Electronic Components

UNR92A6G0L

Toshiba Semiconductor and Storage

RN1104ACT(TPL3)

Diodes Incorporated

DDTC122LU-7-F

Panasonic Electronic Components

UNR211600L

Diodes Incorporated

DDTD123YU-7-F

Rohm Semiconductor

DTA114ESATP

NXP USA Inc.

PDTA123YK,115

Fairchild Semiconductor

FJNS3202RTA

NXP USA Inc.

PDTA123JS,126

Top