BCR119WE6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS NPN 250MW SOT323-3
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The BCR119WE6327HTSA1 by Infineon Technologies is a trusted name in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased are built to meet the highest industry standards, offering reliability and efficiency. Key features include high power dissipation, stable operation, and easy integration. Widely used in computing, aerospace, and defense applications. Infineon Technologies ensures top-tier performance and support. Contact us now to discuss your requirements!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
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