BCR108WH6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS NPN 250MW SOT323-3
$0.04
Available to order
Reference Price (USD)
36,000+
$0.02957
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BCR108WH6327XTSA1 by Infineon Technologies is a trusted name in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased are built to meet the highest industry standards, offering reliability and efficiency. Key features include high power dissipation, stable operation, and easy integration. Widely used in computing, aerospace, and defense applications. Infineon Technologies ensures top-tier performance and support. Contact us now to discuss your requirements!
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 170 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
Related Products
Nexperia USA Inc.
PDTA124XQBZ
Rohm Semiconductor
DTC115TCAT116
Rohm Semiconductor
DTA144TMT2L
Rohm Semiconductor
DTA143TMFHAT2L
Rohm Semiconductor
DTA123YEFRATL
Rohm Semiconductor
DTA143XU3T106
Infineon Technologies
BCR533E6327HTSA1
Nexperia USA Inc.
PDTA114YT,215
Rohm Semiconductor
DTC014EEBTL
Toshiba Semiconductor and Storage