BCP5610H6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN 80V 1A SOT223-4
$0.21
Available to order
Reference Price (USD)
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$0.21000
500+
$0.2079
1000+
$0.2058
1500+
$0.2037
2000+
$0.2016
2500+
$0.1995
Exquisite packaging
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Experience superior performance with BCP5610H6327XTSA1 from Infineon Technologies, a key player in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single provide high gain and low power consumption, ideal for battery-operated devices. Versatile and dependable, BCP5610H6327XTSA1 is suited for a variety of electronic applications. Don't wait reach out now for more information and pricing options.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 2 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4-10
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