BCP5610E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN 80V 1A SOT223-4
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Trust BCP5610E6327HTSA1 by Infineon Technologies for all your transistor needs in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single are built to last, with features like high breakdown voltage and excellent thermal performance. Perfect for automotive, industrial, and consumer electronics, BCP5610E6327HTSA1 ensures reliability. Get in touch today to request a quote and see why Infineon Technologies is a trusted name in the industry.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 2 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4-10
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