BCP49H6419XTMA1
Infineon Technologies
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT223-4
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with BCP49H6419XTMA1 by Infineon Technologies, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, BCP49H6419XTMA1 is the perfect fit. Contact us today to learn more and place your order with Infineon Technologies.
Specifications
- Product Status: Last Time Buy
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
- Power - Max: 1.5 W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
Related Products
onsemi
BC549_J35Z
Fairchild Semiconductor
2N5550/D26Z
onsemi
KSH117TM
Rohm Semiconductor
2SC5729T106Q
onsemi
MPSA64_D74Z
Panasonic Electronic Components
2SB09450Q
onsemi
2N6286G
onsemi
MPS6729G
Panasonic Electronic Components
DSC2501R0L
Rohm Semiconductor