BC856S E6327
Infineon Technologies
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
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The BC856S E6327 Bipolar Junction Transistor Arrays from Infineon Technologies are built for high-efficiency and long-lasting operation. Key benefits include matched transistor pairs, low distortion, and wide operating temperature range, ideal for RF and power amplification. Commonly found in broadcasting equipment, instrumentation, and security systems. Interested in learning more? Submit an inquiry and our experts will guide you through the selection process!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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