BC846BQB-QZ
Nexperia USA Inc.
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
$0.04
Available to order
Reference Price (USD)
1+
$0.03922
500+
$0.0388278
1000+
$0.0384356
1500+
$0.0380434
2000+
$0.0376512
2500+
$0.037259
Exquisite packaging
Discount
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Experience superior performance with BC846BQB-QZ from Nexperia USA Inc., a key player in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single provide high gain and low power consumption, ideal for battery-operated devices. Versatile and dependable, BC846BQB-QZ is suited for a variety of electronic applications. Don't wait reach out now for more information and pricing options.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 340 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1110D-3
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