BC817DPN/DG/B3X
Nexperia USA Inc.
Nexperia USA Inc.
TRANSISTOR GEN PURP
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Experience cutting-edge technology with the BC817DPN/DG/B3X Transistor Arrays by Nexperia USA Inc., designed to meet the highest industry standards. Features include enhanced switching speed, low leakage current, and superior thermal management. Perfect for applications in aerospace, defense, and renewable energy systems. Have questions or need a customized solution? Contact us now and let s discuss how we can support your needs!
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 600mW
- Frequency - Transition: 100MHz, 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
