BAT1705WE6327HTSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 4V 150MW SOT323-3
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The BAT1705WE6327HTSA1 RF Diodes by Infineon Technologies set the standard for quality in high-frequency applications. With robust construction and excellent signal handling, these diodes are perfect for defense and communication systems. Choose Infineon Technologies for dependable RF solutions. Reach out today to learn more.
Specifications
- Product Status: Obsolete
- Diode Type: Schottky - 1 Pair Common Cathode
- Voltage - Peak Reverse (Max): 4V
- Current - Max: 130 mA
- Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
- Resistance @ If, F: 15Ohm @ 5mA, 10kHz
- Power Dissipation (Max): 150 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
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