Shopping cart

Subtotal: $0.00

BAS516,H3F

Toshiba Semiconductor and Storage
BAS516,H3F Preview
Toshiba Semiconductor and Storage
DIODE GEN PURP 100V 250MA ESC
$0.03
Available to order
Reference Price (USD)
4,000+
$0.03060
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 ns
  • Current - Reverse Leakage @ Vr: 200 nA @ 80 V
  • Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: ESC
  • Operating Temperature - Junction: 150°C (Max)

Related Products

Vishay General Semiconductor - Diodes Division

VS-72HFR120

Renesas Electronics America Inc

HSC119TRF-P-E

Comchip Technology

SS310F-HF

Microchip Technology

JANS1N5619US

Microchip Technology

5820SMJE3/TR13

Microchip Technology

JANHCB2N5416

Microchip Technology

1N1583

Renesas Electronics America Inc

HVU187TRF-E

Vishay General Semiconductor - Diodes Division

EGL41AHE3_A/H

Powerex Inc.

RBT83243XXOO

Top