BAS316,H3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE GEN PURP 100V 250MA USC
$0.03
Available to order
Reference Price (USD)
3,000+
$0.03060
Exquisite packaging
Discount
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Revolutionize your power electronics with Toshiba Semiconductor and Storage's BAS316,H3F Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. Toshiba Semiconductor and Storage provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 250mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3 ns
- Current - Reverse Leakage @ Vr: 200 nA @ 80 V
- Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: USC
- Operating Temperature - Junction: 150°C (Max)
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