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BAS116E6327HTSA1

Infineon Technologies
BAS116E6327HTSA1 Preview
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3
$0.37
Available to order
Reference Price (USD)
3,000+
$0.03810
6,000+
$0.03351
15,000+
$0.02892
30,000+
$0.02739
75,000+
$0.02586
150,000+
$0.02433
Exquisite packaging
Discount
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Specifications

  • Product Status: Not For New Designs
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 5 nA @ 75 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23
  • Operating Temperature - Junction: 150°C (Max)

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