BAS116E6327HTSA1
Infineon Technologies

Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3
$0.37
Available to order
Reference Price (USD)
3,000+
$0.03810
6,000+
$0.03351
15,000+
$0.02892
30,000+
$0.02739
75,000+
$0.02586
150,000+
$0.02433
Exquisite packaging
Discount
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Experience next-level performance with Infineon Technologies's BAS116E6327HTSA1 Single Rectifier Diodes, designed for high-power applications. These diodes provide excellent rectification efficiency, making them suitable for solar panels, electric vehicles, and UPS systems. Key features include high current density, fast recovery, and superior thermal management. Infineon Technologies stands by its products with rigorous testing and quality assurance. Need assistance? Contact our sales team now!
Specifications
- Product Status: Not For New Designs
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 5 nA @ 75 V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
- Operating Temperature - Junction: 150°C (Max)