BAP55L,315
NXP USA Inc.
NXP USA Inc.
RF DIODE PIN 50V 500MW DFN1006-2
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Upgrade your RF applications with the BAP55L,315 RF Diodes by NXP USA Inc.. Known for their superior efficiency and low noise, these diodes are perfect for high-frequency circuits. Ideal for use in amplifiers, mixers, and detectors, BAP55L,315 delivers unmatched performance. Reach out now to learn more about how NXP USA Inc. can meet your RF diode needs.
Specifications
- Product Status: Obsolete
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 50V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.28pF @ 20V, 1MHz
- Resistance @ If, F: 700mOhm @ 100mA, 100MHz
- Power Dissipation (Max): 500 mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Package / Case: SOD-882
- Supplier Device Package: DFN1006-2
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