BA779-HG3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
RF DIODE PIN 30V SOT23-3
$0.00
Available to order
Reference Price (USD)
3,000+
$0.08280
6,000+
$0.07820
15,000+
$0.07130
30,000+
$0.06670
75,000+
$0.06440
Exquisite packaging
Discount
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The BA779-HG3-08 RF Diodes by Vishay General Semiconductor - Diodes Division are the go-to choice for engineers seeking high-frequency precision. With excellent thermal stability and low power loss, these diodes are perfect for radar and satellite systems. Choose Vishay General Semiconductor - Diodes Division for reliable RF components. Contact us today to discuss your requirements.
Specifications
- Product Status: Obsolete
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 30V
- Current - Max: 50 mA
- Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
- Resistance @ If, F: 50Ohm @ 1.5mA, 100MHz
- Power Dissipation (Max): -
- Operating Temperature: 125°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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