AS4C8M32MSA-6BINTR
Alliance Memory, Inc.
Alliance Memory, Inc.
IC DRAM 256MBIT PARALLEL 90FBGA
$5.79
Available to order
Reference Price (USD)
1,000+
$4.39425
2,000+
$4.25250
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize your device's potential with Alliance Memory, Inc. AS4C8M32MSA-6BINTR Memory ICs, crafted for precision and performance. Suitable for robotics, surveillance systems, and smart grids, these ICs boast features like non-volatile storage, high-speed interfaces, and minimal power draw. Alliance Memory, Inc. AS4C8M32MSA-6BINTR delivers unmatched quality. Start a conversation with us today to explore customized solutions!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile
- Memory Size: 256Mb (8M x 32)
- Memory Interface: Parallel
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.5 ns
- Voltage - Supply: 1.14V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 90-VFBGA
- Supplier Device Package: 90-FBGA (8x13)
Related Products
Micron Technology Inc.
MT29F2G08ABAGAWP-AATES:G
Micron Technology Inc.
MT55L512Y36FT-11
Renesas Electronics America Inc
71V416L10PHGI8
Infineon Technologies
CY7C199D-10VXI
Rochester Electronics, LLC
CY7C1347B-133BGC
Winbond Electronics
W25N01GVTBIG
Infineon Technologies
CY7C1474BV33-200BGXC
Infineon Technologies
CY14B104LA-BA45XIT
Renesas Electronics America Inc
70V659S12DRI
Renesas Electronics America Inc