AR3PJHM3_A/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 1.8A TO277A
$0.50
Available to order
Reference Price (USD)
6,500+
$0.48900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Revolutionize your power electronics with Vishay General Semiconductor - Diodes Division's AR3PJHM3_A/I Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. Vishay General Semiconductor - Diodes Division provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1.8A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 140 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 44pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Microchip Technology
1N5196UR
onsemi
NSR0170P2T5G
Comchip Technology
ACDBA1200-HF
Solid State Inc.
60HF10
Microchip Technology
UFS510J/TR13
Panjit International Inc.
SBM245L_AY_00001
Panjit International Inc.
SB16AFC_R1_00001
Vishay General Semiconductor - Diodes Division
1N6479-E3/96
Microchip Technology
1N5623/TR
Taiwan Semiconductor Corporation