APTSM120AM25CT3AG
Microsemi Corporation
Microsemi Corporation
POWER MODULE - SIC
$0.00
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Reference Price (USD)
100+
$268.50170
Exquisite packaging
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Discover high-performance APTSM120AM25CT3AG from Microsemi Corporation, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Microsemi Corporation s APTSM120AM25CT3AG enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual), Schottky
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 148A (Tc)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 80A, 20V
- Vgs(th) (Max) @ Id: 3V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 544nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 1000V
- Power - Max: 937W
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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