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APTMC120AM08CD3AG

Microchip Technology
APTMC120AM08CD3AG Preview
Microchip Technology
MOSFET 2N-CH 1200V 250A D3
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Reference Price (USD)
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$1,199.97000
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Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 200A, 20V
  • Vgs(th) (Max) @ Id: 2.2V @ 10mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 490nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 1000V
  • Power - Max: 1100W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: D-3 Module
  • Supplier Device Package: D3

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