APTM50DSK10T3G
Microsemi Corporation
Microsemi Corporation
MOSFET 2N-CH 500V 37A SP3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The APTM50DSK10T3G by Microsemi Corporation is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Microsemi Corporation s APTM50DSK10T3G be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 37A
- Rds On (Max) @ Id, Vgs: 120mOhm @ 18.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4367pF @ 25V
- Power - Max: 312W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
Related Products
onsemi
ECH8651R-R-TL-HX
Diodes Incorporated
DMN5L06VK-7-G
Renesas Electronics America Inc
2SK1284-Z-E1-AZ
WeEn Semiconductors
OP529,005
Harris Corporation
IRF730U
IXYS
FMP36-015P
Microsemi Corporation
APTSM120TAM33CTPAG
onsemi
NTLUD3A50PZTAGHW
Renesas Electronics America Inc
UPA2350T1P-E4-A
Renesas Electronics America Inc