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APTM50DHM65T3G

Microsemi Corporation
APTM50DHM65T3G Preview
Microsemi Corporation
MOSFET 2N-CH 500V 51A SP3
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Specifications

  • Product Status: Obsolete
  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 51A
  • Rds On (Max) @ Id, Vgs: 78mOhm @ 42A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3

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