APTGV50H120T3G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 75A 270W SP3
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The APTGV50H120T3G from Microsemi Corporation sets the standard in IGBT Modules with its compact design and high power density. Ideal for servo drives and plasma cutting, it combines fast switching with low conduction losses. Partner with Microsemi Corporation for top-tier semiconductor solutions. Get in touch for details!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT, Trench Field Stop
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 270 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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