APTGT50DH120T3G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 75A 277W SP3
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Microsemi Corporation's APTGT50DH120T3G IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Microsemi Corporation for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Asymmetrical Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 277 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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