APTGT35H120T1G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 55A 208W SP1
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Enhance your power electronics with APTGT35H120T1G IGBT Modules by Microsemi Corporation. Known for their durability and precision, these modules are perfect for applications like electric vehicles, welding equipment, and UPS systems. Features include low saturation voltage and high current capacity. Get the best in semiconductor solutions reach out for pricing and availability.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 55 A
- Power - Max: 208 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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