APTC90H12T2G
Microsemi Corporation
Microsemi Corporation
MOSFET 4N-CH 900V 30A SP2
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The APTC90H12T2G by Microsemi Corporation is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Microsemi Corporation s APTC90H12T2G be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Obsolete
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP2
- Supplier Device Package: SP2
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