APT95GR65JDU60
Microsemi Corporation
Microsemi Corporation
INSULATED GATE BIPOLAR TRANSISTO
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The APT95GR65JDU60 Single IGBT from Microsemi Corporation delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. Microsemi Corporation's commitment to innovation ensures APT95GR65JDU60 meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 135 A
- Current - Collector Pulsed (Icm): 380 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 95A
- Power - Max: 446 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 420 nC
- Td (on/off) @ 25°C: 29ns/226ns
- Test Condition: 433V, 95A, 4.3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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