APT94N65B2C3G
Microsemi Corporation
Microsemi Corporation
MOSFET N-CH 650V 94A T-MAX
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Reference Price (USD)
30+
$24.06800
Exquisite packaging
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Upgrade your electronic designs with APT94N65B2C3G by Microsemi Corporation, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, APT94N65B2C3G ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 47A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 5.8mA
- Gate Charge (Qg) (Max) @ Vgs: 580 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13940 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 833W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX™ [B2]
- Package / Case: TO-247-3 Variant
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