APT70GR65B2SCD30
Microsemi Corporation
Microsemi Corporation
INSULATED GATE BIPOLAR TRANSISTO
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The APT70GR65B2SCD30 Single IGBT from Microsemi Corporation redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. Microsemi Corporation stands behind every APT70GR65B2SCD30 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 134 A
- Current - Collector Pulsed (Icm): 260 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A
- Power - Max: 595 W
- Switching Energy: -
- Input Type: -
- Gate Charge: 305 nC
- Td (on/off) @ 25°C: 19ns/170ns
- Test Condition: 433V, 70A, 4.3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: T-MAX™ [B2]
Related Products
Harris Corporation
IG77E20CS
Infineon Technologies
SIGC25T60NCX1SA7
Infineon Technologies
SIGC15T60EX1SA1
Infineon Technologies
IRGC35B60PB
Infineon Technologies
DF1400R12IP4D
Infineon Technologies
SIGC25T60SNCX7SA1
IXYS
IXGH56N60B3
Harris Corporation
IGT8E21
Motorola
SGB20N35CL
Infineon Technologies