APT6M100K
Microsemi Corporation
Microsemi Corporation
MOSFET N-CH 1000V 6A TO220
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Microsemi Corporation presents APT6M100K, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, APT6M100K delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 225W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 [K]
- Package / Case: TO-220-3
Related Products
STMicroelectronics
STP21NM50N
onsemi
NTB60N06LT4G
Vishay Siliconix
SI7356ADP-T1-GE3
Infineon Technologies
BSC080N03MSG
onsemi
HUFA76437P3
Alpha & Omega Semiconductor Inc.
AO4452
onsemi
CPH3355-TL-W
onsemi
MPF990
Infineon Technologies
BSZ130N03MSG
STMicroelectronics