APT66M60B2
Microchip Technology
Microchip Technology
MOSFET N-CH 600V 70A T-MAX
$20.27
Available to order
Reference Price (USD)
30+
$17.43600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
APT66M60B2 by Microchip Technology is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, APT66M60B2 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 33A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1135W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX™ [B2]
- Package / Case: TO-247-3 Variant
Related Products
Vishay Siliconix
IRFD310PBF
onsemi
FDMA430NZ
Torex Semiconductor Ltd
XP231N0201TR-G
onsemi
NTB4302G
Nexperia USA Inc.
BUK6213-30C,118
IXYS
IXFA12N50P-TRL
Vishay Siliconix
SIR800ADP-T1-GE3
Fairchild Semiconductor
FQP4N20
Diodes Incorporated
DMP3056LSS-13
Toshiba Semiconductor and Storage