APT30GP60B2DLG
Microsemi Corporation
Microsemi Corporation
IGBT 600V 100A 463W TMAX
$0.00
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Reference Price (USD)
56+
$9.88000
Exquisite packaging
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The APT30GP60B2DLG Single IGBT from Microsemi Corporation delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. Microsemi Corporation's commitment to innovation ensures APT30GP60B2DLG meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
- Power - Max: 463 W
- Switching Energy: 260µJ (on), 250µJ (off)
- Input Type: Standard
- Gate Charge: 90 nC
- Td (on/off) @ 25°C: 13ns/55ns
- Test Condition: 400V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: T-MAX™
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