APT13005DI-G1
Diodes Incorporated
Diodes Incorporated
TRANS NPN 450V 4A TO251
$0.00
Available to order
Reference Price (USD)
3,600+
$0.24750
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience superior performance with APT13005DI-G1 from Diodes Incorporated, a key player in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single provide high gain and low power consumption, ideal for battery-operated devices. Versatile and dependable, APT13005DI-G1 is suited for a variety of electronic applications. Don't wait reach out now for more information and pricing options.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 450 V
- Vce Saturation (Max) @ Ib, Ic: 900mV @ 1A, 4A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
- Power - Max: 25 W
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: TO-251
Related Products
Micro Commercial Co
2N5551-AP
onsemi
TN6714A_D26Z
onsemi
PN3566_D26Z
onsemi
KSA1175RTA
onsemi
2N5401TA
Toshiba Semiconductor and Storage
2SA949-Y(TE6,F,M)
onsemi
BC80725MTF
NXP USA Inc.
2PD1820AR/ZLX
onsemi
2N3416_D29Z
onsemi