APT13003NZTR-G1
Diodes Incorporated
Diodes Incorporated
TRANS NPN 900V 1.5A TO92
$0.51
Available to order
Reference Price (USD)
2,000+
$0.12331
6,000+
$0.11712
10,000+
$0.10782
50,000+
$0.09440
Exquisite packaging
Discount
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Optimize your designs with APT13003NZTR-G1 by Diodes Incorporated, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, APT13003NZTR-G1 is the perfect fit. Contact us today to learn more and place your order with Diodes Incorporated.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 900 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
- Power - Max: 1 W
- Frequency - Transition: 4MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92
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