APT11N80BC3G
Microchip Technology
Microchip Technology
MOSFET N-CH 800V 11A TO247
$4.64
Available to order
Reference Price (USD)
1+
$6.05000
10+
$5.40600
100+
$4.43290
500+
$3.58958
1,000+
$3.02736
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose APT11N80BC3G by Microchip Technology. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with APT11N80BC3G inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 680µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 [B]
- Package / Case: TO-247-3
Related Products
onsemi
FCP190N65S3R0
Vishay Siliconix
SQJA20EP-T1_BE3
onsemi
SFT1431-TL-W
Panjit International Inc.
PJA3440-AU_R1_000A1
Toshiba Semiconductor and Storage
SSM3J371R,LXHF
Rohm Semiconductor
RQ5E035BNTCL
Fairchild Semiconductor
FQU3N40TU
Diodes Incorporated
ZXM61N02FTC
onsemi
NTD30N02G
Micro Commercial Co