APT106N60B2C6
Microchip Technology
Microchip Technology
MOSFET N-CH 600V 106A T-MAX
$17.22
Available to order
Reference Price (USD)
1+
$17.62000
10+
$16.01400
100+
$13.61190
500+
$11.61016
Exquisite packaging
Discount
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Boost your electronic applications with APT106N60B2C6, a reliable Transistors - FETs, MOSFETs - Single by Microchip Technology. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, APT106N60B2C6 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 3.4mA
- Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 833W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX™ [B2]
- Package / Case: TO-247-3 Variant
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