Shopping cart

Subtotal: $0.00

AOU3N60_001

Alpha & Omega Semiconductor Inc.
AOU3N60_001 Preview
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 2.5A TO251-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.25A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 56.8W (Tc)
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Related Products

Diodes Incorporated

MMBF170Q-7-F

Harris Corporation

RF1S70N06

Renesas Electronics America Inc

RJK2555DPA-00#J0

STMicroelectronics

STW28N60M2

STMicroelectronics

STB16N65M5

Diodes Incorporated

DMP1200UFR4-7

Vishay Siliconix

SI7302DN-T1-E3

Vishay Siliconix

SI6469DQ-T1-E3

Infineon Technologies

IRFS5620PBF

Top