AIGB15N65H5ATMA1
Infineon Technologies
Infineon Technologies
DISCRETE SWITCHES
$3.31
Available to order
Reference Price (USD)
1+
$3.31000
500+
$3.2769
1000+
$3.2438
1500+
$3.2107
2000+
$3.1776
2500+
$3.1445
Exquisite packaging
Discount
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The AIGB15N65H5ATMA1 Single IGBT from Infineon Technologies redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. Infineon Technologies stands behind every AIGB15N65H5ATMA1 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Power - Max: 105 W
- Switching Energy: 0.16mJ (on), 0.04mJ (off)
- Input Type: Standard
- Gate Charge: 40 nC
- Td (on/off) @ 25°C: 24ns/22ns
- Test Condition: 400V, 7.5A, 39Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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