AFT26H160-4S4R3
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 65V 2.5GHZ NI880X-4
$0.00
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Reference Price (USD)
250+
$93.76236
Exquisite packaging
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Discover high-performance AFT26H160-4S4R3 RF MOSFETs from NXP USA Inc., designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.5GHz
- Gain: 14.9dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 500 mA
- Power - Output: 32W
- Voltage - Rated: 65 V
- Package / Case: NI-880X-4L4S-8
- Supplier Device Package: NI-880X-4L4S-8
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