AFT23H200-4S2LR6
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 65V 2.3GHZ NI1230-4
$0.00
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Reference Price (USD)
150+
$97.46987
Exquisite packaging
Discount
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The AFT23H200-4S2LR6 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 2.3GHz
- Gain: 15.3dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 500 mA
- Power - Output: 45W
- Voltage - Rated: 65 V
- Package / Case: NI-1230-4LS2L
- Supplier Device Package: NI-1230-4LS2L
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