AFGHL40T120RLD
onsemi
onsemi
1200V/40A FSII IGBT LOW VCESAT T
$11.00
Available to order
Reference Price (USD)
1+
$10.99753
500+
$10.8875547
1000+
$10.7775794
1500+
$10.6676041
2000+
$10.5576288
2500+
$10.4476535
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize power control with AFGHL40T120RLD Single IGBTs from onsemi, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. onsemi ensures AFGHL40T120RLD meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 48 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 529 W
- Switching Energy: 3.4mJ (on), 1.2mJ (off)
- Input Type: Standard
- Gate Charge: 395 nC
- Td (on/off) @ 25°C: 48ns/208ns
- Test Condition: 600V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr): 195 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
Related Products
Infineon Technologies
IRGP6650DPBF
IXYS
IXBH42N300HV
IXYS
IXG100IF1200HF
Renesas Electronics America Inc
RJP63G4DPE-00#J3
onsemi
ISL9V5045S3ST-F085C
IXYS
IXGA20N250HV-TRL
IXYS
IXYH40N120B4
onsemi
NGTD14T65F2SWK
Toshiba Semiconductor and Storage
GT50JR22(STA1,E,S)
IXYS