A3T21H360W23SR6
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
$140.00
Available to order
Reference Price (USD)
150+
$96.71760
Exquisite packaging
Discount
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NXP USA Inc. presents the A3T21H360W23SR6 RF MOSFET series the ultimate solution for high-power RF amplification. With exceptional linearity and low intermodulation distortion, these FETs excel in broadcast equipment and military communications. Their rugged construction ensures longevity even in harsh conditions. Don t compromise on quality request a quote today and experience the difference!
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 2.11GHz ~ 2.2GHz
- Gain: 16.4dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 600 mA
- Power - Output: 328W
- Voltage - Rated: 65 V
- Package / Case: ACP-1230S-4L2S
- Supplier Device Package: ACP-1230S-4L2S
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