A3I35D025GNR1
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR
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NXP USA Inc. presents the A3I35D025GNR1 RF MOSFET series the ultimate solution for high-power RF amplification. With exceptional linearity and low intermodulation distortion, these FETs excel in broadcast equipment and military communications. Their rugged construction ensures longevity even in harsh conditions. Don t compromise on quality request a quote today and experience the difference!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 3.2GHz ~ 4GHz
- Gain: 27.8dB
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: 3.4W
- Voltage - Rated: 28 V
- Package / Case: TO-270-17 Variant, Gull Wing
- Supplier Device Package: TO-270WBG-17
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