A3I25D080NR1
NXP USA Inc.
NXP USA Inc.
AIRFAST RF LDMOS INTEGRATED POWE
$39.34
Available to order
Reference Price (USD)
1+
$39.34000
500+
$38.9466
1000+
$38.5532
1500+
$38.1598
2000+
$37.7664
2500+
$37.373
Exquisite packaging
Discount
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NXP USA Inc. presents the A3I25D080NR1 RF MOSFET series the ultimate solution for high-power RF amplification. With exceptional linearity and low intermodulation distortion, these FETs excel in broadcast equipment and military communications. Their rugged construction ensures longevity even in harsh conditions. Don t compromise on quality request a quote today and experience the difference!
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 2.3GHz ~ 2.69GHz
- Gain: 29.2dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 175 mA
- Power - Output: 8.3W
- Voltage - Rated: 65 V
- Package / Case: TO-270-17 Variant, Flat Leads
- Supplier Device Package: TO-270WB-17
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