A3G26D055N-1805
NXP USA Inc.
NXP USA Inc.
RF REFERENCE CIRCUIT 25W 1805-18
$703.12
Available to order
Reference Price (USD)
1+
$703.12000
500+
$696.0888
1000+
$689.0576
1500+
$682.0264
2000+
$674.9952
2500+
$667.964
Exquisite packaging
Discount
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Meet NXP USA Inc.'s A3G26D055N-1805, a game-changing RF MOSFET tailored for cutting-edge wireless technologies. Featuring advanced packaging for reduced parasitic effects and enhanced thermal management, these transistors are vital for 5G base stations and satellite systems. Trusted by engineers worldwide for consistent performance. Have questions? Reach out now for expert guidance!
Specifications
- Product Status: Active
- Transistor Type: GaN
- Frequency: 100MHz ~ 2.69GHz
- Gain: 13.9dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 40 mA
- Power - Output: 8W
- Voltage - Rated: 125 V
- Package / Case: 6-LDFN Exposed Pad
- Supplier Device Package: 6-PDFN (7x6.5)
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