A2T18S162W31GSR3
NXP USA Inc.
NXP USA Inc.
IC TRANS RF LDMOS
$0.00
Available to order
Reference Price (USD)
250+
$102.34604
Exquisite packaging
Discount
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Unlock next-gen RF performance with A2T18S162W31GSR3 from NXP USA Inc.. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.84GHz
- Gain: 20.1dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1 A
- Power - Output: 32W
- Voltage - Rated: 65 V
- Package / Case: NI-780GS-2L2LA
- Supplier Device Package: NI-780GS-2L2LA
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