A2T18S160W31SR3
NXP USA Inc.
NXP USA Inc.
IC TRANS RF LDMOS
$0.00
Available to order
Reference Price (USD)
250+
$154.48628
Exquisite packaging
Discount
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The A2T18S160W31SR3 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.88GHz
- Gain: 19.9dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1 A
- Power - Output: 32W
- Voltage - Rated: 65 V
- Package / Case: NI-780S-2L2LA
- Supplier Device Package: NI-780S-2L2LA
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