A2T18H160-24SR3
NXP USA Inc.
NXP USA Inc.
RF MOSFET LDMOS DL 28V NI780S
$113.10
Available to order
Reference Price (USD)
250+
$92.31156
Exquisite packaging
Discount
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Unlock next-gen RF performance with A2T18H160-24SR3 from NXP USA Inc.. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 1.81GHz
- Gain: 17.9dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 400 mA
- Power - Output: 28W
- Voltage - Rated: 65 V
- Package / Case: NI-780S-4L2L
- Supplier Device Package: NI-780S-4L2L
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