A2T07D160W04SR3128
NXP USA Inc.
NXP USA Inc.
RF POWER LDMOS TRANSISTOR
$78.25
Available to order
Reference Price (USD)
1+
$78.25000
500+
$77.4675
1000+
$76.685
1500+
$75.9025
2000+
$75.12
2500+
$74.3375
Exquisite packaging
Discount
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Trust A2T07D160W04SR3128 by NXP USA Inc. for all your transistor needs in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single are built to last, with features like high breakdown voltage and excellent thermal performance. Perfect for automotive, industrial, and consumer electronics, A2T07D160W04SR3128 ensures reliability. Get in touch today to request a quote and see why NXP USA Inc. is a trusted name in the industry.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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