A2I25H060NR1
NXP USA Inc.
NXP USA Inc.
IC RF LDMOS AMP
$0.00
Available to order
Reference Price (USD)
500+
$60.10998
Exquisite packaging
Discount
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The A2I25H060NR1 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 2.59GHz
- Gain: 26.1dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 26 mA
- Power - Output: 10.5W
- Voltage - Rated: 65 V
- Package / Case: TO-270-17 Variant, Flat Leads
- Supplier Device Package: TO-270WB-17
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